Copper fill of microvia using a thiol-modified Cu seed layer and various levelers

Journal of the Electrochemical Society

Volumn 156, Issue 8, 2009, Pages

  Dow, Wei Ping ^a   Li, Chih Chan ^a   Lin, Meng Wen ^b   Su, Ging Wen ^a   Huang, Chen Chia ^b  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADLAYER; COPPER ELECTRODES; COPPER ELECTROPLATING; COPPER SEED; COPPER SURFACE; DISPLACEMENT RATE; ELECTROCHEMICAL BEHAVIORS; GALVANOSTATIC MEASUREMENT; JANUS GREEN B; MICROVIA; MICROVIA FILLING; PLATING BATH; PLATING PROCESS; PLATING SOLUTIONS; PRE-TREATMENT; ROTATING SPEED; SAFRANINE O; SEED LAYER; THIOL MOLECULES;

COPPER DEPOSITS; DYES; ELECTROPLATING; ETHYLENE; ETHYLENE GLYCOL; MAGNETOPLASMA; MONOLAYERS; POLYETHYLENE GLYCOLS; POLYETHYLENE OXIDES;

COPPER;

EID: 67650642194     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3147273     Document Type: Article

References (40)

1. K. Takagi, H. Honma, and T. Sasabe, IEEE Electr. Insul. Mag. (USA) 0883-7554, 19, 27 (2003). 10.1109/MEI.2003.1238715
2. V. Sundaram, R. R. Tummala, F. Liu, P. A. Kohl, J. Li, S. A. Bidstrup-Allen, and Y. Fukuoka, IEEE Trans. Adv. Packag. 1521-3323, 27, 315 (2004). 10.1109/TADVP.2004.831890
3. H. Honma, Electrochim. Acta 0013-4686, 47, 75 (2001). 10.1016/S0013-4686(01)00591-6
4. T. Kobayashi, J. Kawasaki, K. Mihara, and H. Honma, Electrochim. Acta 0013-4686, 47, 85 (2001). 10.1016/S0013-4686(01)00592-8
5. M. J. Lefebvre, G. Allardyce, M. Seita, H. Tsuchida, M. Kusaka, and S. Hayashi, Circuit World 0305-6120, 29, 9 (2003). 10.1108/03056120310454943
6. M. Suppa, Circuit World 0305-6120, 34, 25 (2008). 10.1108/ 03056120810848761
7. L. T. Koh, G. Z. Tou, C. Y. Li, and P. D. Foo, Microelectron. J. 0026-2692, 33, 229 (2002). 10.1016/S0026-2692(01)00122-7
8. T. P. Moffat, B. Baker, D. Wheeler, and D. Josell, Electrochem. Solid-State Lett. 1099-0062, 6, C59 (2003). 10.1149/1.1553936
9. A. Frank and A. J. Bard, J. Electrochem. Soc. 0013-4651, 150, C244 (2003). 10.1149/1.1557081
10. C. Gabrielli, P. Mocoteguy, H. Perrot, A. Zdunek, P. Bouard, and M. Haddix, Electrochem. Solid-State Lett. 1099-0062, 7, C31 (2004). 10.1149/1.1643793
11. L. D'Urzo, H. H. Wang, A. Pa, and C. Zhi, J. Electrochem. Soc. 0013-4651, 152, C243 (2005). 10.1149/1.1869212
12. L. D'Urzo, H. H. Wang, C. Tang, A. Pa, and C. Zhi, J. Electrochem. Soc. 0013-4651, 152, C697 (2005). 10.1149/1.2008993
13. R. Palmans, S. Claes, L. E. Vanatta, and D. E. Coleman, J. Chromatogr., A, 1085, 147 (2005). 10.1016/j.chroma.2005.02.042
14. C. Gabrielli, P. Mo̧ot́guy, H. Perrot, A. Zdunek, and D. Nieto-Sanz, J. Electrochem. Soc. 0013-4651, 154, D13 (2007). 10.1149/1.2364831
15. B. G. Xie, J. J. Sun, X. B. Chen, J. H. Chen, T. L. Xiang, and G. N. Chen, J. Electrochem. Soc. 0013-4651, 154, D516 (2007). 10.1149/1.2761461
16. M. Stangl, J. Acker, S. Oswald, M. Uhlemann, T. Gemming, S. Baunack, and K. Wetzig, Microelectron. Eng. 0167-9317, 84, 54 (2007). 10.1016/j.mee.2006.08. 004
17. C. Gabrielli, P. Moot́guy, H. Perrot, D. Nieto-Sanz, and A. Zdunek, J. Appl. Electrochem. 0021-891X, 38, 457 (2008). 10.1007/s10800-007-9459-1
18. T. P. Moffat, D. Wheeler, C. Witt, and D. Josell, Electrochem. Solid-State Lett. 1099-0062, 5, C110 (2002). 10.1149/1.1521290
19. W. P. Dow and M. Y. Yen, Electrochem. Solid-State Lett. 1099-0062, 8, C161 (2005). 10.1149/1.2039957
20. W. P. Dow, Y. D. Chiu, and M. Y. Yen, J. Electrochem. Soc. 0013-4651, 156, D155 (2009). 10.1149/1.3078407
21. J. B. Schlenoff, M. Li, and H. Ly, J. Am. Chem. Soc. 0002-7863, 117, 12528 (1995). 10.1021/ja00155a016
22. A. Ulman, Chem. Rev. (Washington, D.C.) 0009-2665, 96, 1533 (1996). 10.1021/cr9502357
23. S. Chon and W. Paik, Phys. Chem. Chem. Phys. 1463-9076, 3, 3405 (2001). 10.1039/b101035m
24. G. Hager and A. G. Brolo, J. Electroanal. Chem. 0022-0728, 550-551, 291 (2003). 10.1016/S0022-0728(03)00052-4
25. J. C. Love, L. A. Estroff, J. K. Kriebel, R. G. Nuzzo, and G. M. Whitesides, Chem. Rev. (Washington, D.C.) 0009-2665, 105, 1103 (2005). 10.1021/cr0300789
26. C. J. Campbell, S. Soh, and B. A. Grzybowski, Langmuir 0743-7463, 24, 11600 (2008). 10.1021/la801569k
27. Z. Y. Jian, T. Y. Chang, Y. C. Yang, W. P. Dow, S. L. Yau, and Y. L. Lee, Langmuir 0743-7463, 25, 179 (2009). 10.1021/la8029598
28. W. P. Dow, M. Y. Yen, and M. J. Lefebvre, in IEEE Conference Proceedings on Microsystems, Packaging, Assembly and Circuits Technology, IEEE, Taipei, Taiwan, p. 123 (2007).
29. B. M. Baol, A. Durmu, T. Wang, S. Erdemli, and J. Bogart, J. Electrochem. Soc. 0013-4651, 153, C683 (2006). 10.1149/1.2223993
30. M. Hayase and M. Nagao, J. Electrochem. Soc. 0013-4651, 156, D198 (2009). 10.1149/1.3111036
31. S. Mazur and C. E. Jackson, Jr., J. Electrochem. Soc. 0013-4651, 155, D608 (2008). 10.1149/1.2952524
32. W. -P. Dow and H. -S. Huang, J. Electrochem. Soc. 0013-4651, 152, C67 (2005). 10.1149/1.1849934
33. W. -P. Dow, M. -Y. Yen, C. -W. Liu, and C. -C. Huang, Electrochim. Acta 0013-4686, 53, 3610 (2008). 10.1016/j.electacta.2007.12.048
34. W. D. Callister, Jr., Materials Science and Engineering: An Introduction, 6th ed., p. 81, John Wiley & Sons, New York (2003).
35. W. -P. Dow, H. -S. Huang, M. -Y. Yen, and H. -C. Huang, J. Electrochem. Soc. 0013-4651, 152, C425 (2005). 10.1149/1.1901670
36. W. -P. Dow and C. -W. Liu, J. Electrochem. Soc. 0013-4651, 153, C190 (2006). 10.1149/1.2165743
37. Y. -B. Li, W. Wang, and Y. -L. Li, J. Electrochem. Soc. 0013-4651, 156, D119 (2009). 10.1149/1.3071603
38. T. P. Moffat, D. Wheeler, S. -K. Kim, and D. Josell, J. Electrochem. Soc. 0013-4651, 153, C127 (2006). 10.1149/1.2165580
39. T. P. Moffat, D. Wheeler, M. D. Edelstein, and D. Josell, IBM J. Res. Dev. 0018-8646, 49, 19 (2005).
40. T. P. Moffat, D. Wheeler, S. -K. Kim, and D. Josell, Electrochim. Acta 0013-4686, 53, 145 (2007). 10.1016/j.electacta.2007.03.025