Roles of chloride ion in microvia filling by copper electrodeposition I. Studies using SEM and optical microscope

Journal of the Electrochemical Society

Volumn 152, Issue 2, 2005, Pages

  Dow, Wei Pins ^a   Huang, Her Shu ^a  

^a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; CATHODES; ELECTROPLATING; ENERGY DISPERSIVE SPECTROSCOPY; FILLING; OPTICAL MICROSCOPY; POLYETHYLENE GLYCOLS; POSITIVE IONS; PRINTED CIRCUIT BOARDS;

3-MERCARPTO-1-PROPANESULFONATE (MPS); CHLORIDE IONS; COPPER ELECTRODEPOSITION; MICROVIA FILLING;

ELECTRODEPOSITION;

EID: 14744275071     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1849934     Document Type: Article

References (47)

1. J. H. Lau, Low Cost Flip Chip Technologies for DCA, WLCSP, and PBGA Assemblies. McGraw-Hill, Inc., New York (2000).
2. T. Kobayashi,J.Kawasaki, K. Mihara, and H. Honma, Electrochem. Acta, 47, 85 (2001).
3. S. Soukane, S. Sen, and T. S. Cale. J. Electrochem. Soc., 149, C74 (2002).
4. H. Xiao, Introduction to Semiconductor Manufacturing Technology, p. 494, Prentice-Hall Inc., New York (2001).
5. P. C. Andricacos, C. Uzoh, J. O. Dukovic, J. Horkans, and H. Deligianni, IBM J. Res. Dev., 42, 567 (1998).
6. J. J. Kelly and A. C. West, Electrochem. Solid-State Lett., 2, 561 (1999).
7. T. P. Moffat, J. E. Bonevich, W. H. Huber, A. Stanishevsky, D. R. Kelly, G. R. Stafford, and D. Josell, J. Electrochem. Soc., 147, 4524 (2000).
8. P. Taephaisitphongse, Y. Cao, and A. C. West, J. Electrochem. Soc., 148, C492 (2001).
9. J. Reid, Jpn. J. Appl. Phys., Part 1, 40, 2650 (2001).
10. T. Haba, T. Itabashi, H. Akahoshi, A. Sano, K. Kobayashi, and H. Miyazaki, Mater. Trans., JIM, 43, 1593 (2002).
11. J. J. Kim, S.-K. Kim, and Y. S. Kim, J. Electroanal. Chem., 542, 61 (2003).
12. A. Frank and A. J. Bard, J. Electrochem. Soc., 150, C244 (2003).
13. M. Tan and J. N. Harb, J. Electrochem. Soc., 150, C420 (2003).
14. M. King and A. A. Gewirth, J. Electrochem. Soc., 150, C426 (2003).
15. J.-J. Sun, K. Kondo, T. Okamura, S. Oh, M. Tomisaka, R Yonemura, M. Hoshino, and K. Takahashi, J. Electrochem. Soc., 150, 0355 (2003).
16. L. Bonou, M. Eyraud, R. Denoyel, and Y. Massiani, Electrochim. Acta, 47, 4139 (2002).
17. W.-P. Dow, H.-S. Huang, and Z. Lin, Electrochem. Solid-State Lett., 6, C134 (2003).
18. W.-P Dow, H.-S. Huang, M.-Y. Yen, and H.-H. Chen, J. Electrochem. Soc., 152, C77 (2005).
19. J. Reid, S. Mayer, E. Broadbent, E. Klawuhn, and K. Ashtiani, Solid State Technol., 43, 86 (2000).
20. M. Yokoi, S. Konishi, and T. Hayashi, Denki Kagaku, 52, 218 (1984).
21. J. D. Reid and A. P. David, Plat. Surf. Finish., 74, 66 (1987).
22. J. P. Healy, D. Pletcher, and M. Goodenough, J. Electroanal. Chem., 338, 155 (1992).
23. D. Stoychcv and C. Tsvetanov, J. Appl. Electrochem., 26, 741 (1996).
24. J. J. Kelly and A. C. West, J. Electrochem. Soc., 145, 3472 (1998).
25. J. J. Kelly and A. C. West, J. Electrochem. Soc., 145, 3477 (1998).
26. K. Doblhofer, S. Waste, D. M. Soares, K. G. Weil, and G. Ertl, J. Electrochem. Soc., 150, C657 (2003).
27. H. P. Lee, K. Nobe, and A. J. Pearlstein, J. Electrochem. Soc., 132, 1031 (1985).
28. A. J. Pearlstein, H. P. Lee, and K. Nobe, J. Electrochem. Soc., 132, 2159 (1985).
29. T. Kekesi and M. Isshiki, J. Appl. Electrochem. 27, 982 (1997).
30. D. P. Barkey, F. Oberholtzer, and Q. Wu, J. Electrochem. Soc., 145, 590 (1998).
31. D. Hua and D. Barkey, Plat Surf. Finish., 90, 40 (2003).
32. N. Zukauskaite and A. Malinanskas, Electrochemistry (Tokyo, Jpn.), 24, 1567 (1989).
33. J. P. Healy, D. Pletcher, and M. Goodenough, J. Electroanal. Chem., 338, 167 (1992).
34. G. G. Láng, M. Ujvári, and G. Horányi, J. Electroanal. Chem. 522, 179 (2002).
35. D. M. Soares, S. Wasle, K. G. Weil, and K. Doblhofer, J. Electroanal. Chem., 532, 353 (2002).
36. T. P. Moffat, D. Wheeler, W. H. Huber, and D. Josell, Electrochem. Solid-State Lett. 4, C26 (2001).
37. A. C. West, S. Mayer, and J. Reid. Electrochem. Solid-State Lett., 4, C50 (2001).
38. D. Josell, D. Wheeler, W. H. Huber, and T. P. Moffat, Phys. Rev. Lett., 87, 016102 (2001).
39. Z. Nagy, J. P. Blaudeau, N. C. Hung, L. A. Curtiss, and D. J. Zurawski, J. Electrochem. Soc., 142, L87 (1995).
40. W. L. Li, J. H. Ye, and S. F. Y. Li, J. Appl. Electrochem. 31, 1395 (2001).
41. S.-C. Chang, J.-M. Shieh, K. C. Lin, B.-T. Dai, T.-C Wang, C.-F. Chen, M.-S. Feng, Y.-H. Li, and C-P. Lu, J. Vac. Sci. Technol. B, 20, 1311 (2002).
42. M. Hiyase, M. Taketani, K. Aizawa, T. Hatsuzawa, and K. Hayabusa, Electrochem. Solid-State Lett., 5, C98 (2002).
43. F. K. Crundwell, Electrochem. Acta. 37, 2707 (1992).
44. Z. V. Feng, X. Li, and A. A. Gewirth, J. Phys. Chem. B, 107, 9415 (2003).
45. Y. Feng, W.-K. Teo, K.-S. Siow, Z. Gao, K.-L. Tan, and A.-K. Hsieh, J. Electrochem. Soc., 144, 55 (1997).
46. H. Y. Ma, C. Yang, S. H. Chen, Y. L. Jiao, S. X. Huang, D. G. Li, and J. L. Luo, Electrochem. Acta, 48, 4277 (2003).
47. C. M. Whelan, M. Kinsella, L. Carbonell, R M. Ho, and K. Maex, Microelectron. Eng., 70, 551 (2003).