Intrinsic and Mn doped InAs quantum dots studied at the atomic scale by cross-sectional scanning tunneling microscopy

Solid State Communications

Volumn 149, Issue 35-36, 2009, Pages 1410-1418

  Ulloa, J M ^a   Bozkurt, M ^a   Koenraad, P M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

A. Magnetic dopant; A. Manganese; A. Quantum dots; D. Capping process

Indexed keywords

A. MAGNETIC DOPANT; A. MANGANESE; A. QUANTUM DOTS; ATOMIC SCALE; CAPPING PROCESS; CROSS-SECTIONAL SCANNING TUNNELING MICROSCOPIES; D. CAPPING PROCESS; DOPING ATOMS; DOT FORMATIONS; IMPURITIES IN; INAS; INAS QUANTUM DOTS; INAS SELF-ASSEMBLED QUANTUM DOTS; INAS/GAAS; MN-DOPED; MULTILAYER STRUCTURES; SEMICONDUCTOR NANOSTRUCTURES; SIZE AND SHAPE; STM TECHNIQUE;

ATOMS; DOPING (ADDITIVES); INDIUM ARSENIDE; MANGANESE; MANGANESE COMPOUNDS; NANOSTRUCTURES; SCANNING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM; WIND TUNNELS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 67650627321     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2009.04.036     Document Type: Article

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