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Volumn 26, Issue 1-4, 2005, Pages 446-449
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Magnetic field dependence of hole levels in InAs quantum dots
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Author keywords
Capacitance voltage spectroscopy; Holes; InAs quantum dots; Magnetic field
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Indexed keywords
CAPACITANCE;
COULOMB BLOCKADE;
ELECTRIC POTENTIAL;
ELECTRON TUNNELING;
HOLE MOBILITY;
INDIUM COMPOUNDS;
MAGNETIC FIELDS;
SPECTROSCOPIC ANALYSIS;
ANGULAR MOMENTUM;
CAPACITANCE-VOLTAGE SPECTROSCOPY;
HOLES;
INAS QUANTUM DOTS;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 13444257696
PISSN: 13869477
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physe.2004.08.078 Document Type: Conference Paper |
Times cited : (5)
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References (13)
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