Mature InAs quantum dots on the GaAs(114)A surface

Applied Physics Letters

Volumn 84, Issue 13, 2004, Pages 2283-2285

  Xu, M C ^a   Temko, Y ^a   Suzuki, T ^a   Jacobi, K ^a  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; INDIUM COMPOUNDS; ION BOMBARDMENT; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STOICHIOMETRY; THERMODYNAMICS;

ATOMICALLY RESOLVED SCANNING TUNNELING MICROSCOPY; AZIMUTHAL ORIENTATION; BOUNDING FACETS; NANOPARTICLES; SELF-ASSEMBLED QUANTUM DOTS (QD);

SEMICONDUCTOR QUANTUM DOTS;

EID: 2142750210     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1691196     Document Type: Article

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