Positive bias temperature instability effects in nMOSFETs with HfO 2/TiN gate stacks

IEEE Transactions on Device and Materials Reliability

Volumn 9, Issue 2, 2009, Pages 128-134

  Ioannou, Dimitris P ^a   Mittl, Steve ^a   La Rosa, Giuseppe ^a  

^a IBM   (United States)

Author keywords

Charge trapping; Defect generation; High dielectric; Metal gate; Positive Bias Temperature Instability (PBTI); Stress induced leakage current (SILC)

Indexed keywords

DE-TRAPPING; DEFECT GENERATION; DEVICE LIFETIME; DUAL LAYER; EXPERIMENTAL EVIDENCE; GATE STACKS; IS PROCESS; METAL GATE; NMOSFETS; POSITIVE BIAS TEMPERATURE INSTABILITIES; POSITIVE BIAS TEMPERATURE INSTABILITY (PBTI); POSITIVE BIAS TEMPERATURE INSTABILITY EFFECTS; STRESS CONDITION; STRESS-INDUCED; STRESS-INDUCED LEAKAGE CURRENT; STRESS-INDUCED LEAKAGE CURRENT (SILC); TEMPERATURE STRESS; TIN GATES; TRAP GENERATION;

CHARGE TRAPPING; ELECTRIC INSULATORS; ELECTRIC POTENTIAL; HAFNIUM COMPOUNDS; LOGIC GATES; TITANIUM NITRIDE;

STABILITY;

EID: 67650327361     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2009.2020432     Document Type: Conference Paper

References (17)

1. S. Zafar, A. Kumar, E. Gusev, and E. Cartier, "Threshold voltage instabilities in high-k gate dielectric stacks," IEEE Trans. Device Mater. Rel., vol. 5, no. 1, pp. 45-64, Mar. 2005.
2. G. Ribes, J. Mitard, M. Denais, S. Bruyere, F. Monsieur, C. Parthasarathy, E. Vincent, and G. Ghibaudo, "Review on high-k dielectric reliabil ity issues," IEEE Trans. Device Mater. Rel., vol. 5, no. 1, pp. 5-19, Mar. 2005.
3. R. Choi, S. J. Rhee, J. C. Lee, B. H. Lee, and G. Bersuker, "Charge trapping and detrapping characteristics in hafnium silicate gate stack under static and dynamic stress," IEEE Electron Device Lett., vol. 26, no. 3, pp. 197-199, Mar. 2005.
4. 2 stacks using low frequency noise characteristics," in Proc. Int. Integr. Reliab. Workshop Final Rep., 2006, pp. 111-115.
5. G. Reimbold, J. Mitard, X. Garros, C. Leroux, G. Ghibaudo, and F. Martin, "Initial and PBTI-induced traps and charges in Hf-based oxides/ TiN stacks," Microelectron. Reliab., vol. 47, no. 4/5, pp. 489-496, Apr./May 2007.
6. 2 gate stack with low preexisting traps," IEEE Electron Device Lett., vol. 26, no. 9, pp. 610-612, Sep. 2005.
7. C. D. Young, S. Nadkarni, D. Heh, H. R. Harris, R. Choi, J. J. Peterson, J. H. Sim, S. A. Krishnan, J. Barnett, E. Vogel, B. H. Lee, P. Zeitzoff, G. A. Brown, and G. Bersuker, "Detection of electron trap generation due to constant voltage stress on high-k gate stacks," in Proc. Int. Reliab. Phys. Symp., 2006, pp. 169-173.
8. K. Tse, D. Liu, K. Xiong, and J. Robertson, "Oxygen vacancies in high-k oxides," Microelectron. Eng., vol. 84, no. 9/10, pp. 2028-2031, Sep./Oct. 2007.
9. B. Kaczer, T. Grasser, P. J. Roussel, J. M. Martinez, R. O'Connor, B. J. O'Sullivan, and G. Groeseneken, "Ubiquitous relaxation in BTI stressing - New evaluation and insights," in Proc. Int. Reliab. Phys. Symp., 2008, pp. 20-27.
10. 2 MOSFETs," IEEE Trans. Electron Devices, vol. 50, no. 6, pp. 1517-1524, Jun. 2003.
11. D. Heh, P. D. Kirsch, C. D. Young, and G. Bersuker, "A new dielectric degradation phenomenon in nMOS high-k devices under positive bias stress," in Proc. Int. Reliab. Phys. Symp., 2008, pp. 347-351.
12. S. Chakravarthi, A. T. Krishnan, V. Reddy, C. F. Machala, and S. Krishnan, "A comprehensive framework for predictive modeling of negative bias temperature instability," in Proc. Int. Reliab. Phys. Symp., 2004, pp. 273-282.
13. T. Nigam, R. Degraeve, G. Groeseneken, M. M. Heyns, and H. E. Maes, "A fast and simple methodology for lifetime prediction of ultra-thin oxides," in Proc. Int. Reliab. Phys. Symp., 1999, pp. 381-388.
14. E. Cartier and A. Kerber, "Stress induced leakage current and defect generation in NFETs with HfO2/TiN gate stacks during positive bias temperature stress," in Proc. Int. Reliab. Phys. Symp., 2009, pp. 486-492.
15. 2 dual layer gate dielectrics," IEEE Electron Device Lett., vol. 24, no. 2, pp. 87-89, Feb. 2003.
16. 2 stack," in Proc. Int. Reliab. Phys. Symp., 2004, pp. 181-187.
17. T. Grasser, W. Gos, V. Sverdlov, and B. Kaczer, "The universality of NBTI relaxation and its implications for modeling and characterization," in Proc. Int. Reliab. Phys. Symp., 2007, pp. 268-280.