Detection of electron trap generation due to constant voltage stress on high-κ gate stacks

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2006, Pages 169-173

  Young, C D ^a   Nadkarni, S ^a   Heh, D ^d   Harris, H R ^b   Choi, R ^a   Peterson, J J ^a   Sim, J H ^a   Krishnan, S A ^a   Barnett, J ^a   Vogel, E ^d   Lee, B H ^c   Zeitzoff, P ^a   Brown, G A ^a   Bersuker, G ^a  

^a SEMATECH   (United States)

^b ADVANCED MICRO DEVICES   (United States)

^c IBM   (United States)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Charge pumping; High ; Trap generation; Trapped charge

Indexed keywords

CHARGE PUMPING; TRAP GENERATION; TRAPPED CHARGES;

ELECTRIC EXCITATION; GATES (TRANSISTOR); RELIABILITY THEORY; SILICA; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

ELECTRON TRAPS;

EID: 33748125814     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2006.251211     Document Type: Conference Paper

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