A new dielectric degradation phenomenon in nMOS high-k devices under positive bias stress

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2008, Pages 347-351

  Heh, Dawei ^a   Kirsch, Paul D ^a   Young, Chadwin D ^a   Bersuker, Gennadi ^a  

^a SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

POSITIVE BIAS; RELIABILITY PHYSICS; THRESHOLD VOLTAGE SHIFTS;

HOLE TRAPS;

THRESHOLD VOLTAGE;

EID: 51549101653     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2008.4558910     Document Type: Conference Paper

References (10)

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