Spatial probing of traps in nMOSFET with ALD HfO2/SiO 2 stacks using low frequency noise characteristics

IEEE International Integrated Reliability Workshop Final Report

Volumn , Issue , 2006, Pages 111-115

  Xiong, H D ^a   Suehle, J S ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

1 f noise; Border trap; Charge pumping; High k gate dielectrics; Metal gate; MOSFETs

Indexed keywords

DIELECTRIC DEVICES; HAFNIUM COMPOUNDS; MOSFET DEVICES; SILICA; SPURIOUS SIGNAL NOISE; THICKNESS MEASUREMENT;

DIELECTRIC INTERFACES; FREQUENCY NOISE CHARACTERISTICS; VOLUME TRAP DENSITY;

CHARGE TRAPPING;

EID: 41649088204     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2006.305222     Document Type: Conference Paper

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