Raman scattering analysis of the residual stress in metal-induced crystallized amorphous silicon thin films using nickel

Applied Surface Science

Volumn 255, Issue 19, 2009, Pages 8252-8256

  Nguyen, Thanh Nga ^a   Nguyen, Van Duy ^a   Jung, Sungwook ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Amorphous silicon; Metal induced crystallization (MIC); Nickel; Polycrystalline; Raman spectrum; Residual stress

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; ANNEALING; FILM THICKNESS; METAL ANALYSIS; NICKEL; RAMAN SCATTERING; RESIDUAL STRESSES; STRESS ANALYSIS; THIN FILMS;

AMORPHOUS SILICON THIN FILMS; ANNEALING TEMPERATURES; CRYSTALLIZATION PARAMETER; CRYSTALLIZATION TEMPERATURE; METAL-INDUCED CRYSTALLIZATION; POLYCRYSTALLINE; SEED LAYER THICKNESS; THIN-FILM PROPERTIES;

AMORPHOUS SILICON;

EID: 67649422584     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.05.087     Document Type: Article

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