Nickel induced lateral crystallization behavior of amorphous silicon films

Applied Surface Science

Volumn 240, Issue 1-4, 2005, Pages 155-160

  Li, J F ^a   Sun, X W ^a   Yu, M B ^b   Qi, G J ^c   Zeng, X T ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

Author keywords

Amorphous silicon; Crystallization; Nickel; Polycrystalline silicon

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; CUBIC BORON NITRIDE; CURRENT DENSITY; DIFFUSION; ELECTRIC FIELDS; EPITAXIAL GROWTH; ETCHING; GRAIN BOUNDARIES; HEATING; NICKEL; POLYSILICON; SCANNING ELECTRON MICROSCOPY; THIN FILMS;

CRYSTALLINITY; GATE VOLTAGE; JOULE HEATING; POTENTIAL BARRIERS;

AMORPHOUS SILICON;

EID: 10444230330     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.06.115     Document Type: Article

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