SCOPUS 정보 검색 플랫폼

Journal of Non-Crystalline Solids

Volumn 354, Issue 19-25, 2008, Pages 2341-2344

Polycrystalline silicon with large disk-shaped grains by Ni-mediated crystallization of doped amorphous silicon

(3) Kim, Kyung Ho a,b Nathan, Arokia b,c Jang, Jin a

a Kyung Hee University (South Korea)

b UNIVERSITY OF WATERLOO (Canada)

c UNIVERSITY COLLEGE LONDON (United Kingdom)

Author keywords

Crystallization; Silicon; TEM; Thin film transistors

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; DOPING (ADDITIVES); GRAIN GROWTH; GRAIN SIZE AND SHAPE; NICKEL; THIN FILM TRANSISTORS; TRANSMISSION ELECTRON MICROSCOPY;

DISK-SHAPED GRAINS; P-DOPANT; P-DOPED AMORPHOUS SILICON; SILICIDE MEDIATED CRYSTALLIZATION;

POLYSILICON;

EID: 42649131046 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2007.10.089 Document Type: Article

Times cited : (9)

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