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Volumn 42, Issue 1, 2006, Pages 165-175

Raman-active phonon line profiles in semiconducting nanowires

Author keywords

Inhomogeneous heating; microRaman; Nanowires; Phonon confinement; Quantum confinement; Silicon

Indexed keywords

INHOMOGENEOUS HEATING; MICRO RAMAN; NANOWIRES; PHONON CONFINEMENT; QUANTUM CONFINEMENT;

EID: 33749551519     PISSN: 09242031     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vibspec.2006.04.018     Document Type: Article
Times cited : (18)

References (43)
  • 35
    • 33749560074 scopus 로고    scopus 로고
    • Horiba Join Yvonne Inc., 3880 Park Avenue, Edison NJ 08820, USA; Crenshaw Inc., 5277 Trillium Blvd., Hoffman Estates, IL 60192, USA, Anomic Imaging Ltd., Man hat Technology Park, Malta, Jerusalem, Israel 91487.
  • 36
    • 33749565154 scopus 로고    scopus 로고
    • K.W. Adu, H.R. Gutierrez, P.C. Eklund, 2005, To be published.
  • 38
    • 33749559626 scopus 로고    scopus 로고
    • note
    • 18,19. In the ideal case, where all wires would grow along the same direction (e.g., (1 1 1), we would use the optical phonon dispersion averaged in a plane perpendicular to the (1 1 1) axis. However, we have observed several growth directions in our ensembles (e.g., (1 1 1), (1 0 0), (0 1 1)). Therefore, an isotropic dispersion is a reasonable approximation in our case.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.