Memory properties of oxide-nitride-oxynitride stack structure using ultra-thin oxynitrided film as tunneling layer for nonvolatile memory device on glass

Thin Solid Films

Volumn 517, Issue 1, 2008, Pages 362-364

  Jung, Sungwook ^a   Hwang, Sunghyun ^a   Yi, J ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Capacitance voltage (C V); Metal oxide nitride oxynitride silicon (MONOS); Oxide nitride oxynitirde (ONOn); Retention

Indexed keywords

CAPACITANCE; CHARGE TRAPPING; DATA STORAGE EQUIPMENT; DIELECTRIC MATERIALS; FABRICATION; GLASS; NONMETALS; PLASMA DEPOSITION; POLYSILICON; SILICON; SILICON NITRIDE; TUNNELING (EXCAVATION);

BLOCKING LAYERS; CAPACITANCE-VOLTAGE; CAPACITANCE-VOLTAGE (C-V); CHARGE STORAGES; FLATBAND VOLTAGES; HIGH FREQUENCY CAPACITANCES; LARGE RANGES; MEMORY PROPERTIES; NONVOLATILE MEMORIES; NONVOLATILE MEMORY DEVICES; OXYNITRIDATION; RANGING; RETENTION; SILICON OXYNITRIDE FILMS; SILICON SURFACES; STACK STRUCTURES; UNIFORM THICKNESSES;

NITRIDES;

EID: 54849441006     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.045     Document Type: Article

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