Tensile strain in arsenic heavily doped Si

Journal of Applied Physics

Volumn 102, Issue 10, 2007, Pages

  Borot, G ^a   Rubaldo, L ^a   Clement, L ^a   Pantel, R ^a   Dutartre, D ^a   Kuitunen, K ^b   Slotte, J ^b   Tuomisto, F ^b   Mescot, X ^c   Gri, M ^c   Ghibaudo, G ^c  

^a STMICROELECTRONICS   (France)

^b Laboratory of Physics   (Finland)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); EPITAXIAL LAYERS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; POSITRON ANNIHILATION SPECTROSCOPY; TENSILE STRAIN; X RAY DIFFRACTION;

ARSENIC VACANCIES DEFECTS; PLANE PARAMETER; TETRAGONAL LATTICE;

SILICON;

EID: 36649019786     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2816251     Document Type: Article

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