Characterization of double gate TFTs fabricated in advanced SLS ELA polycrystalline silicon films

Solid-State Electronics

Volumn 51, Issue 6, 2007, Pages 936-940

  Kouvatsos, Dimitrios N ^a   Farmakis, Filippos V ^a   Moschou, Despina C ^a   Kontogiannopoulos, Giannis P ^a   Papaioannou, George J ^b   Voutsas, Apostolos T ^c  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b UNIVERSITY OF ATHENS   (Greece)

^c SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

Double gate MOS; Lateral solidification; Polysilicon; Thin film transistors

Indexed keywords

AVALANCHE EFFECT; DOUBLE GATE MOS; LATERAL SOLIDIFICATION; THRESHOLD CONTROL;

ANNEALING; AVALANCHE DIODES; CHARACTERIZATION; EXCIMER LASERS; OPTIMIZATION; POLYCRYSTALLINE MATERIALS; SOLIDIFICATION;

THIN FILM TRANSISTORS;

EID: 34250829701     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.04.003     Document Type: Article

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