Polycrystalline silicon thin film made by metal-induced crystallization

Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 433-437

  Kim, Do Young ^a   Gowtham, M ^a   Shim, Myung Suk ^a   Yi, Junsin ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Metal induced crystallization; Polycrystalline silicon; Rapid thermal crystallization; Solar cells

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTAL STRUCTURE; CRYSTALLIZATION; EUTECTICS; LSI CIRCUITS; POLYSILICON; QUARTZ; RAMAN SPECTROSCOPY; SOLAR CELLS; THERMAL EFFECTS; VOLUME FRACTION;

CRYSTALLINITY; LARGE-SCALE INTEGRATION (LSI) PROCESS; METAL-INDUCED CRYSTALLIZATION; RAPID THERMAL CRYSTALLIZATION;

THIN FILMS;

EID: 9544226452     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.118     Document Type: Conference Paper

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