Explanation for the leakage current in polycrystalline-silicon thin-film transistors made by Ni-silicide mediated crystallization

Applied Physics Letters

Volumn 81, Issue 18, 2002, Pages 3404-3406

  Van Der Zaag, P J ^a   Verheijen, M A ^a   Yoon, S Y ^a   Young, N D ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION PROCESS; DISPLAY APPLICATION; IN-SITU TRANSMISSION; LEAKAGE PROBLEMS; LOW-LEAKAGE CURRENT; NI-SILICIDE; POLY-SI TFTS; SOURCE-DRAIN VOLTAGE; TWO-STAGE PROCESS;

AMORPHOUS MATERIALS; AMORPHOUS SILICON; IN SITU PROCESSING; LEAKAGE CURRENTS; SILICIDES; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

THIN FILM TRANSISTORS;

EID: 79956003982     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1517406     Document Type: Article

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