Polycrystalline silicon thin films obtained by ni-induced crystallization on glass substrate

Vacuum

Volumn 76, Issue 2-3, 2004, Pages 151-154

  Dimova Malinovska, D ^a   Angelov, O ^a   Sendova Vassileva, M ^a   Kamenova, M ^a   Pivin, J C ^b   Pramatarova, L ^c  

^a CTRL LAB SOLAR ENER NEW ENER S   (Bulgaria)

^b CENTRE DE CALCUL DE L INSTITUT NATIONAL DE PHYSIQUE NUCLEAIRE ET DE PHYSIQUE DES PARTICULES   (France)

^c INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

Metal induced crystallization; Polycrystalline silicon; Raman spectroscopy; Rutherford back scattering

Indexed keywords

CRYSTALLIZATION; ELECTRIC FIELDS; GLASS; IMAGE SENSORS; INTERFACES (MATERIALS); NICKEL; POLYCRYSTALLINE MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SUBSTRATES;

CO-SPUTTERING; LATERAL DIFFUSION; METAL-INDUCED CRYSTALLIZATION;

THIN FILMS;

EID: 7244258953     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.07.057     Document Type: Conference Paper

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