Resonant Raman scattering in polycrystalline silicon thin films

Applied Physics Letters

Volumn 73, Issue 12, 1998, Pages 1718-1720

  Paillard, V ^a   Puech, P ^a   Laguna, M A ^a   Temple Boyer, P ^b   Caussat, B ^c   Couderc, J P ^c   De Mauduit, B ^d  

^a CNRS   (France)

^b LAAS CNRS   (France)

^c LABORATOIRE DE GÉNIE CHIMIQUE   (France)

^d CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0003176462     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122256     Document Type: Article

References (10)

1. A. T. Voutsas, M. K. Hatalis, J. Boyce, and A. Chiang, J. Appl. Phys. 78, 6999 (1995), and references therein.
2. J. Macía, E. Martín, A. Pérez-Rodriguez, J. Jiménez, J. R. Morante, B. Aspar, and J. Margail, J. Appl. Phys. 82, 3730 (1997).
3. I. De Wolf, Semicond. Sci. Technol. 11, 139 (1996).
4. A. Mlayah, R. Grac, G. Armelles, R. Carles, A. Zwick, and F. Briones, Phys. Rev. Lett. 78, 4119 (1997) and references therein.
5. P. Y. Yu and M. Cardona, Fundamentals of Semiconductors: Physics and Materials Properties (Springer, Berlin, 1996), pp. 388-392.
6. J. B. Renucci, R. N. Tyte, and M. Cardona, Phys. Rev. B 11, 3885 (1975).
7. R. W. Bormett, S. A. Asher, R. E. Witowski, W. D. Partlow, R. Lizewski, and F. Pettit, J. Appl. Phys. 77, 5916 (1995).
8. Z. Iqbal and S. Veprek, J. Phys. C Solid State Phys. 15, 377 (1982) and references therein.
9. L. P. Avakyanta, L. L. Gerasimov, V. S. Gorelik, N. M. Mania, E. D. Obrastsova, and Yu. I. Plotnikov, J. Mol. Struct. 267, 177 (1992).
10. E. Anastassakis, Physical Problems in Microelectronics, Proceedings of the 4th International School ISPPM, edited by J. Kassavod, Varan, Bulgaria, 1985, p. 128.