Hydrogen implantation-induced defects in bulk Si studied by Raman spectrometry

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 182-186

  Villeneuve, C ^a,b   Paillard, V ^b   Bourdelle, K K ^a   Cayrefourcq, I ^a   Boussagol, A ^a   Kennard, M ^a  

^a PARC TECHNOLOGIQUE DES FONTAINES   (France)

^b UNIVERSITÉ PAUL SABATIER   (France)

Author keywords

Defects; Implantation; Raman spectrometry; Spatial correlation model

Indexed keywords

CARRIER CONCENTRATION; HYDROGEN; ION IMPLANTATION; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON;

BINARY COLLISION CODES; DIFFERENT EXCITATION WAVELENGTHS; SPATIAL CORRELATION MODELS; TRANSISTOR CHANNEL REGION;

CRYSTAL DEFECTS;

EID: 33751330264     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.027     Document Type: Article

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