Analysis of stress in laser-crystallized polysilicon thin films by Raman scattering spectroscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 8, 2002, Pages 5055-5059

  Kitahara, Kuninori ^a   Yamazaki, Ryosuke ^b   Kurosawa, Toshitaka ^a   Nakajima, Kazuo ^a   Moritani, Akihiro ^c  

^a SHIMANE UNIVERSITY   (Japan)

^b KOMATSU LTD   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

Characterization; Laser annealing; LCD; Microcrystal; Poly Si; Raman; Solid phase crystallization; Stress; TFT

Indexed keywords

ANNEALING; CRYSTALLIZATION; EXCIMER LASERS; LASER BEAM EFFECTS; LIQUID CRYSTAL DISPLAYS; PHONONS; POLYSILICON; RAMAN SCATTERING; SPECTROSCOPIC ANALYSIS; TENSILE STRESS; THERMAL STRESS; THIN FILM TRANSISTORS;

LASER ANNEALING; RAMAN SCATTERING SPECTROSCOPY;

THIN FILMS;

EID: 0036698529     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5055     Document Type: Article

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