The influence of electron-beam irradiation on electrical characteristics of metal-insulator-semiconductor capacitors based on a high-k dielectric stack of HfTiSiO(N) and HfTiO(N) layers

Microelectronics Reliability

Volumn 49, Issue 7, 2009, Pages 716-720

  Thangadurai, P ^a   Kaplan, W D ^a   Mikhelashvili, V ^a   Eisenstein, G ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

BULK DIELECTRIC; C-V CHARACTERISTIC; C-V CURVE; CAPACITANCE VOLTAGE; CONSTANT VOLTAGE; DIELECTRIC CONSTANTS; ELECTRICAL CHARACTERISTIC; ELECTRON-BEAM IRRADIATIONS; HIGH-K DIELECTRIC; IRRADIATION EFFECT; METAL INSULATOR SEMICONDUCTOR CAPACITORS; METAL INSULATOR SEMICONDUCTOR STRUCTURES; NEGATIVE BIAS; POSITIVE CHARGES; SEMICONDUCTOR-DIELECTRIC INTERFACE;

CAPACITANCE; ELECTRON IRRADIATION; METAL INSULATOR BOUNDARIES; MIS DEVICES; RADIATION; SEMICONDUCTOR INSULATOR BOUNDARIES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 67649419564     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.04.003     Document Type: Article

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