Charge trapping in HfO2 and HfSiO4 MOS gate dielectrics

Solid-State Electronics

Volumn 50, Issue 9-10, 2006, Pages 1670-1672

  Chang, Kyuhwan ^a   Chang, Feng Ming ^a   Ruzyllo, Jerzy ^a  

^a The Pennsylvania State University   (United States)

Author keywords

Charge trapping; CMOS; Gate dielectrics; HfO2; HfSiO4; High k dielectrics

Indexed keywords

DEPOSITION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; SILICON;

CHARGE TRAPPING; GATE DIELECTRICS; HFO2; HIGH-K DIELECTRICS;

CMOS INTEGRATED CIRCUITS;

EID: 33750370914     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.08.010     Document Type: Article

References (16)

1. Wilk G.D., Wallace R.M., and Anthony J.M. High-k gate dielectrics: current status and materials properties considerations. J Appl Phys 89 10 (2001) 5243-5275
2. Callegari A., Cartier E., Gribelyuk M., Okorn-Schmidt H.F., and Zabel T. Physical and electrical characterization of hafnium oxide and hafnium silicate sputtered films. J Appl Phys 90 12 (2001) 6466-6475
3. Wilk G.D., Wallace R.M., and Anthony J.M. Hafnium and zirconium silicates for advanced gate dielectrics. J Appl Phys 87 (2000) 484-490
4. Houssa M., Naili M., Heyns M.M., and Stesmans A. Model for the charge trapping in high permittivity gate dielectric stacks. J Appl Phys 89 1 (2001) 792-794
5. 2 gate dielectric stacks. J Appl Phys 91 12 (2002) 10127-10129
6. 2-based hole channel FETs. J Electrochem Soc 151 12 (2004) F288-F291
7. Chang K, Shallenberger J, Chang F-M, Shanmugasundaram K, Ruzyllo J. Studies of Hf(Si,O) dielectrics for MOS gate applications. Thin Solid Films, accepted for publication.
8. Lee D.-O., Roman P., Wu C.-T., Mumbauer P., Brubaker M., Grant R., et al. Mist deposited high-k dielectrics for next generation MOS gates. Solid State Electron 46 (2002) 1671-1677
9. Chang K, Shanmugasundaram K, Lee DO, Roman P, Wu C-T, Wang J, et al. Study of the effect of silicon surface treatments on equivalent oxide thickness in high-k dielectric MOS gate stacks. In: Ruzyllo J, Hattori T, Opila R, Novak R, editors. Proceedings eighth international symposium on cleaning Technology in semiconductor device manufacturing, Electrochem Soc Proc vol. PV 2003-26, 2004. p. 78-85.
10. Mumbauer P., Chang K., Mahoney W., Lee D.-O., Shanmugasundaram P.K., Roman P., et al. Mist deposition in semiconductor device manufacturing. Semicond Int 27 12 (2004) 75-79
11. Robertson J. Band offsets of wide-band-gap oxides and implications for future electronic devices. J Vac Sci Technol B 18 (2000) 1785-1791
12. Dumin N.A., Dickerson K.J., Dumin D.J., and Moore B.T. Correlation of the decay of tunneling currents with trap generation inside thin oxides. Solid State Electron 39 5 (1996) 655-660
13. Felix J.A., Fleetwood D.M., Schrimpf R.D., Hong J.G., Lucovsky G., Schwank J.R., et al. Total-dose radiation response of hafnium-silicate capacitors. IEEE Trans Nucl Sci 49 6 (2002) 3191-3196
14. 2 gate dielectric stacks. Appl Phys Lett 81 4 (2002) 709-711
15. Hubbard K.J., and Schlom D.G. Thermodynamic stability of binary oxides in contact with silicon. J Mater Res 11 11 (1996) 2757-2776
16. x gate dielectric stacks during post-deposition oxidation. Appl Phys Lett 77 12 (2000) 1885-1887