Sub-30-nm hybrid lithography (electron beamdeep ultraviolet) and etch process for fully depleted metal oxide semiconductor transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 25, Issue 6, 2007, Pages 2030-2033

  Pauliac Vaujour, S ^a   Brianceau, P ^a   Landis, S ^a   Chiaroni, J ^a   Faynot, O ^a  

^a MINATEC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIELECTRIC MATERIALS; ETCHING; GATES (TRANSISTOR); MOS DEVICES; SILICON ON INSULATOR TECHNOLOGY; TITANIUM NITRIDE;

METAL GATES; RESIST THICKNESS;

ELECTRON BEAM LITHOGRAPHY;

EID: 37149002466     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2798731     Document Type: Article

References (21)

1. H. de Koning, Microelectron. Eng. 27, 421 (1995).
2. L. Pain, C. Higgins, B. Scarfogliere, S. Tedesco, B. Dal'Zotto, C. Gourgon, M. Ribeiro, T Kusumoto, M. Suetsugu, and R. Hanawa, J. Vac. Sci. Technol. B 18, 3388 (2000).
3. H. Ito and C. G. Willson, Polym. Eng. Sci. 23, 1012 (1983).
4. S. Landis, S. Pauliac, J. Saint-Pol, C. Gourgon, M. Akita, R. Hanawa, and M. Suetsugu, Jpn. J. Appl. Phys., Part 1 43, 3974 (2004).
5. S. Landis, S. Pauliac, R. Hanawa, M. Suetsugu, and M. Akita, Microelectron. Eng. 73-74, 271 (2004).
6. S. Pauliac, S. Landis, J. Foucher, and J. Thiault, Microelectron. Eng. 83, 1761 (2006).
7. S. Wolf and R. N. Tauber, Silicon Processing for the VLSI Era: Process Technology (Lattice, 1986), Vol. 1, p. 438.
8. H. G. Tompkins, J. A. Sellers, and C. Tracy, J. Appl. Phys. 73, 3932 (1993).
9. S. Tedesco, T. Mounier, P. J. Paniez, and B. Mortini, J. Vac. Sci. Technol. B 16, 3676 (1998).
10. S. Nevas, F. Manoo Chery, and E. Ikonen, Metrologia 40, S200 (2003).
11. Y. Martin and H. K. Wickramasinghe, Appl. Phys. Lett. 64, 19 (1994).
12. J. Foucher and K. Miller, Proc. SPIE 5375, 444 (2004).
13. K. A. Pears, Microelectron. Eng. 77, 255 (2005).
14. K. A. Pears, M. Stavrev, A. Scire, R. Koepe, M. Markert, U. Egger, and L. Donohue, Microelectron. Eng. 81, 156 (2005).
15. K. A. Pears, Microelectron. Eng. 81, 7 (2005).
16. H. C. Lee, M. Creusen, G. Groeseneken, and S. Vanhaelemeersch, Proceedings of the International Symposium on Plasma Process-Induced Damage, Honolulu, (American Vacuum Society, 1998).
17. M. Yoshimi, IEEE Trans. Electron Devices 36, 493 (1989).
18. B. Maiti, P. J. Tobin, C. Hobbs, R. I. Hegde, F. Huang, D. L. O'Meara, D. Jovanovic, M. Mendicino, J. Chen, D. Connelly, O. Adetutu, J. Mogab, J. Candelaria, and L. B. La, Tech. Dig. - Int. Electron Devices Meet. 1998, 781.
19. X. Wu, P. C. H. Chan, S. Zhang, and M. Chan, Proceedings of the IEEE Conference on Electron Devices and Solid-State Circuits, 19-21 December 2005 (IEEE, New York, 2005), pp. 781-784.
20. J. Thiault, J. Foucher, J. H. Tortai, O. Joubert, S. Landis, and S. Pauliac, J. Vac. Sci. Technol. B 23, 3075 (2005).
21. X. Wu, P. C. H. Chan, and M. Chan, Proceedings of the IEEE International SOI Conference, 2003 (IEEE, New York, 2003), pp. 151-152.