Generation of misfit dislocations and stacking faults in supercritical thickness strained-Si/SiGe heterostructures

Applied Physics Letters

Volumn 88, Issue 3, 2006, Pages 1-3

  Kimura, Y ^a   Sugii, N ^a   Kimura, S ^a   Inui, K ^b   Hirasawa, W ^b  

^a HITACHI LTD   (Japan)

^b Renesas Eastern Japan Semiconductor Inc   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); ETCHING; MATHEMATICAL MODELS; SILICON COMPOUNDS; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY;

CROSSHATCH PATTERN; MISFIT DISLOCATION; SIGE BUFFER LAYER; STRAIN ENERGY;

HETEROJUNCTIONS;

EID: 31144461711     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2167391     Document Type: Article

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