Strained-silicon MOSFETs of low leakage current and high breakdown voltage for analog applications

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 54-55

  Sugii, N ^a   Kondo, M ^b   Miyamoto, M ^a   Hoshino, Y ^b   Hatori, M ^b   Hirasawa, W ^c   Kimura, Y ^a   Kimura, S ^a   Kondo, Y ^b   Yoshida, I ^b  

^a HITACHI LTD   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

^c Renesas Eastern Japan Semiconductor Inc   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33745131446     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469209     Document Type: Conference Paper

References (3)

1. M. H. Lee et al., Tech. Dig. Int. Electron Devices Mtg., 2003, pp. 69.
2. J. G. Fiorenza et al., Ext. Abs. ISTDM 2004, pp. 137.
3. N. S. Waldron et al.. Tech. Dig. Int. Electron Devices Mtg., 2003, pp. 813.