Electronic structure of oxygen vacancies in La2O3, Lu2O3 and LaLuO3

Microelectronic Engineering

Volumn 86, Issue 7-9, 2009, Pages 1672-1675

  Xiong, Ka ^a   Robertson, John ^b  

^a The University of Texas at Dallas   (United States)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Electronic structure; High dielectric constant gate oxides; Oxygen vacancy

Indexed keywords

BAND OFFSETS; CHARGED STATE; ENERGY LEVEL; FIRST-PRINCIPLES CALCULATION; HIGH DIELECTRIC CONSTANT GATE OXIDES;

CERAMIC CAPACITORS; CHARGE TRAPPING; DIELECTRIC WAVEGUIDES; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LANTHANUM; LUTETIUM; OXYGEN; PERMITTIVITY; VACANCIES;

OXYGEN VACANCIES;

EID: 67349275590     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.016     Document Type: Article

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