Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors

Journal of Applied Physics

Volumn 105, Issue 10, 2009, Pages

  Hu, W D ^a   Chen, X S ^a   Yin, F ^a   Quan, Z J ^a   Ye, Z H ^a   Hu, X N ^a   Li, Z F ^a   Lu, W ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR TRAPS; BAND TO BAND TUNNELING; CHARACTERISTIC PARAMETER; CURRENT COMPONENT; CURRENT MECHANISMS; DYNAMIC RESISTANCE; ELEMENT ARRAY; FITTING PARAMETERS; GENERATION RECOMBINATION; HGCDTE; HIGH TEMPERATURE; HIGHER TEMPERATURES; LONG WAVELENGTH; LONG-WAVELENGTH INFRARED; LOW TEMPERATURES; NONLINEAR FITTING; OPERATION TEMPERATURE; PHYSICAL MODEL; REVERSE BIAS; SERIES RESISTANCES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THEORETICAL STUDY; TRAP ASSISTED TUNNELING; TUNNELING EFFECTS; VOLTAGE CURVE; VOLTAGE RANGES;

CURVE FITTING; DARK CURRENTS; DETECTORS; MERCURY (METAL); MERCURY COMPOUNDS; TELLURIUM COMPOUNDS; TUNNELING (EXCAVATION);

CURRENT VOLTAGE CHARACTERISTICS;

EID: 66549120019     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3130163     Document Type: Article

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