Effects of carrier degeneracy and conduction band non-parabolicity on the simulation of HgCdTe photovoltaic devices

Infrared Physics and Technology

Volumn 50, Issue 1, 2007, Pages 1-8

  Quan, Z J ^a   Chen, G B ^a   Sun, L Z ^a   Ye, Z H ^a   Li, Z F ^a   Lu, W ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

Carrier density approximation; Device simulation; HgCdTe (MCT); Photovoltaic devices

Indexed keywords

APPROXIMATION THEORY; CARRIER CONCENTRATION; COMPUTER SIMULATION; MATHEMATICAL MODELS;

CARRIER DEGENERACY; CARRIER DENSITY APPROXIMATION; CONDUCTION BAND; DEVICE SIMULATION; FERMI-DIRAC INTEGRATION; NON-PARABOLICITY;

PHOTOVOLTAIC CELLS;

EID: 33847299489     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2006.02.001     Document Type: Article

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