Acceptor level related Shockley-Read-Hall centers in p-HgCdTe

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 275-279

  Nishino, H ^a   Ozaki, K ^a   Tanaka, M ^a   Saito, T ^a   Ebe, H ^a   Miyamoto, Y ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER MOBILITY; CRYSTAL DEFECTS; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTOR DOPING; SILVER;

ACCEPTOR; AUGER RECOMBINATION; MERCURY CADMIUM TELLURIDE; MERCURY VACANCY; MINORITY CARRIER LIFETIME; SHOCKLEY-READ-HALL CENTERS;

LIQUID PHASE EPITAXY;

EID: 0033689225     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00088-9     Document Type: Article

References (8)

1. Lopes V.C., Syllaios A.J., Chen M.C. Semicond. Sci. Technol. 8:1993;824.
2. Chen M.C., Colombo L., Dodge J.A., Tregilgas J.H. J. Electron. Mater. 24:1995;539.
3. Tanaka M., Ozaki K., Nishino H., Ebe H., Miyamoto Y. J. Electron. Mater. 27:1998;579.
4. Yoshikawa M., Ueda S., Maruyama K., Takigawa H. J. Vac. Sci. Technol. A. 3:1985;156.
5. Capper P., Gosney J.J.G., Jones C.L., Kenworthy I., Roberts J.A. J. Crystal Growth. 71:1985;57.
6. Chen M.C. J. Appl. Phys. 64:1988;945.
7. Uedono A., Ozaki K., Ebe H., Moriya T., Tanigawa S., Yamamoto K., Miyamoto Y. Jpn. J. Appl. Phys. 36:1997;6661.
8. Kenworthy I., Capper P., Jones C.L., Gosney J.J.G., Coates W.G. Semicond. Sci. Technol. 5:1990;854.