Effect of dislocations on the zero-bias resistance-area product, quantum efficiency, and spectral response of LWIR HgCdTe photovoltaic detectors

IEEE Transactions on Electron Devices

Volumn 50, Issue 5, 2003, Pages 1220-1226

  Gopal, Vishnu ^a   Gupta, Sudha ^a  

^a SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

Dislocations; HgCdTe photovoltaic detectors; Quantum efficiency; R0A product; Spectral response

Indexed keywords

CALCULATIONS; DIFFUSION; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; INFRARED DETECTORS; MATHEMATICAL MODELS; MERCURY COMPOUNDS; OPTICAL PROPERTIES; QUANTUM EFFICIENCY;

LONG WAVELENGTH INFRARED PHOTODIODES; PHOTOVOLTAIC DETECTORS; SPECTRAL RESPONSE; ZERO BIAS RESISTANCE AREA PRODUCT;

PHOTODIODES;

EID: 0043175231     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813230     Document Type: Article

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