Analysis of 1/f noise in LWIR HgCdTe photodiodes

Journal of Electronic Materials

Volumn 29, Issue 6, 2000, Pages 877-882

  Bae, Soo Ho ^a   Lee, Sang Jun ^a   Kim, Young Ho ^a   Lee, Hee Chul ^a   Kim, Choong Ki ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; INFRARED DETECTORS; MERCURY COMPOUNDS; PHOTODIODES;

MERCURY CADMIUM TELLURIDE;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033700739     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-000-0242-x     Document Type: Article

References (23)

1. A.I. D'Souza, P.S. Wijewarnasuriya, R.E. DeWames, G. Hildebrandt, J. Bajaj, D.D. Edwell, J.G. Pasko, and J.M. Arias, J. Electron. Mater. 28, 611 (1999).
2. T.G.M. Kleinpenning, and A.H. de Kuijper, J. Appl. Phys. 63, 43 (1988).
3. T.G.M. Kleinpenning, Physica 121B, 81 (1983).
4. A. van der Ziel, P. Fang, L. He, X.L. Wu, and A.D. van Rheenen, J. Vac. Sci. Technol. A7, 550 (1989).
5. Y.K. Su, F.S. Juang, S.M. Chang, C.D. Chiang, and Y.T. Cherng, IEEE J. Quant. Electron. 35, 751 (1999).
6. Y. Nemirovsky and A. Unikovsky, J. Vac. Sci. Technol. B10, 1602 (1992).
7. J. Bajaj, E.R. Blazejewski, G.M. Williams, and R.E. DeWames, J. Vac. Sci. Technol. B10, 1617 (1992).
8. G.M. Williams, E.R. Blazejewski, and R.E. DeWames, AIP Conf,. Proc. 285, 421 (1993).
9. H.K. Chung, M.A. Rosenberg, and P.H. Zimmermann, J. Vac. Sci. Technol. A3, 189 (1985).
10. R. Schiebel, D. Bartholomew, M. Bevan, R.S. List, and M. Ohlson, J. Electron. Mater. 24, 1299 (1995).
11. S. Murakami, H. Nishino, H. Ebe, and Y. Nishijima, J. Electron. Mater. 24, 1143 (1995).
12. J.P. Rosbeck, R.E. Starr, S.L. Price, and K.J. Riley, J. Appl. Phys. 53, 6430 (1982).
13. K. Kim, H. Jung, H. Shin, H.C. Lee, and C.K. Kim, J. Electron. Mater. 26, 662 (1997).
14. L.O. Bubulac, J. Cryst. Growth 86, 723 (1988).
15. G.L. Destefanis, J. Cryst. Growth 86, 700 (1988).
16. S.P. Tobin, S. Iwasa, and T.J. Tredwell, IEEE Trans. ED 27, 43 (1980).
17. R.S. Muller and T. I. Kamins, Device Electron. for Integ. Circ., 2nd edition (New York: Wiley, 1986).
18. R. Adar, IEEE Trans. Electron Dev. 39, 976 (1992).
19. V. Gopal and V. Dhar, IEEE Trans. Electron Dev. ED-33, 1489 (1986).
20. P.K. Chakraborty, Solid-State Electron. 34, 665 (1991).
21. Y. Nemirovsky, R. Fastow, M. Meyassed, and A. Unikovsky, J. Vac. Sci. Technol. B9, 1829 (1991).
22. W.W. Anderson and H.J. Hoffman, J. Appl. Phys. 53, 9130 (1982).
23. C.T. Sah, Phys. Rev. 123, 1594 (1961).