Dark currents in HgCdTe photodiodes passivated with ZnS/CdS

Journal of the Electrochemical Society

Volumn 146, Issue 4, 1999, Pages 1540-1545

  Juang, F S ^a   Su, Y K ^b   Chang, S J ^b   Chang, S M ^b   Shu, F S ^b   Chiang, C D ^c   Cherng, Y T ^c   Sun, T P ^c  

^a NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRIC CURRENTS; ELECTRON TUNNELING; ION IMPLANTATION; MATHEMATICAL MODELS; MERCURY COMPOUNDS; PASSIVATION; SEMICONDUCTING CADMIUM COMPOUNDS; TEMPERATURE; ZINC SULFIDE;

BAND TO BAND TUNNELING; DARK CURRENTS; GENERATION RECOMBINATION; RESISTANCE VOLTAGE CHARACTERISTICS; REVERSE BIAS; TEMPERATURE DEPENDENCE; TRAP ASSISTED TUNNELING MECHANISM;

PHOTODIODES;

EID: 0032684004     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391801     Document Type: Article

References (23)

1. P. W. Kruse, in Semiconductors, and Semimetals, Vol. 18, R. K. Willardson and A. C. Beer, Editors, Chap. 1, p. 1, Academic Press, New York (1981).
2. D. A. Scribner, M. R. Kruer, and J. M. Killiany, Proc. IEEE, 79, 66 (1991).
3. J. D. Lin, Y. K. Su, S. J. Chang, M. Yokoyama, and F. Y. Juang, J. Vac. Sci. Technol., A, 12, 7 (1994).
4. J. H. Jeong, H. C. Lee, and C. K. Kim, Jpn. J. Appl. Phys., 31, L1785 (1992).
5. Y. K. Su, C. T. Lin, H. T. Huang, S. J. Chang, T. P. Sun, G. S. Chen, and J. J. Luo, Jpn. J. Appl. Phys., 35, 1165 (1996).
6. C. T. Lin, Y. K. Su, H. T. Huang, S. J. Chang, G. S. Chen, T. P. Sun, and J. J. Luo, IEEE Photonics Technol. Lett., 8, 676 (1996).
7. C. T. Lin, Y. K. Su, S. J. Chang, H. T. Huang, S. M. Chang, and T. P Sun, IEEE Photonics Technol. Lett., 9, 232 (1997).
8. J. L. Melendez and J. Beck, J. Electron. Mater., 22, 993 (1993).
9. J. F. Siliquini, C. A. Musca, B. D. Nener, and L. Faraone, IEEE Trans. Electron Devices, 42, 1441 (1995).
10. R. M. Broudy and V. J. Mazurczyck, in Semiconductors and Semimetals, Vol. 18, R. K. Willardson and A. C. Beer, Editors, Chap. 5, p. 166, Academic Press, New York (1981).
11. R. E. DeWames, J. G. Pasko, E. S. Yao, A. H. B. Vanderwyck, and G. M. Williams, J. Vac. Sci. Technol., A, 6, 2655 (1988).
12. R. E. DeWames, G. M. Williams, J. G. Pasko, and A. H. B. Vanderwyck, J. Cryst. Growth, 86, 849 (1988).
13. R. Balcerak, J. F. Gibson, W. H. Gutierrez, and J. H. Pollar, Opt. Eng., 26, 191 (1987).
14. S. M. Sze, Physics of Semiconductor Devices, pp.84-89, Wiley-Interscience, New York (1969).
15. C. T. Sah, R. N. Noyce, and W. Shockley, Proc. IRE (IEEE), 45, 1228 (1957).
16. M. B. Reine, A. K. Sood, and T. J. Tredwell, in Semiconductors and Semimetals, Vol. 18, R. K. Willardson and A. C. Beer, Editors, Chap. 6, p. 207, Academic Press, New York (1981).
17. A. Rogalski, Infrared Phys., 28, 139 (1988).
18. M. A. Kinch, in Semiconductors and Semimetals, Vol. 18, R. K. Willardson and A. C. Beer, Editors, Chap. 7, Academic Press, New York (1981).
19. Y. Nemirovsky and I. Bloom, Infrared Phys., 27, 143 (1987).
20. Y. Nemirovsky and A. Unlkovsky, J. Vac. Sci. Technol., B, 10, 1602 (1992).
21. M. Lanir and K. Riley, IEEE Trans. Electron Devices, ED-29, 274 (1982).
22. H. R. Vydyanath, P. B. Ward, S. R. Hampton, J. Fishman, J. Slavinski, C. Devaney, J. Ellsworth, and T. Krueger, in SPIE Proc. Vol. 686, Infrared Detectors, Sensors and Focal Plane Arrays (1986); SPIE-Int. Soc. Opt. Instrumention Eng.
23. W. W. Anderson, Infrared Phys., 20, 353 (1980).