Analysis of the dynamic resistance variation as a function of reverse bias voltage in a HgCdTe diode

Semiconductor Science and Technology

Volumn 15, Issue 7, 2000, Pages 752-755

  Singh, S K ^a   Gopal, V ^a   Bhan, R K ^a   Kumar, V ^a  

^a SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE MEASUREMENT; MERCURY AMALGAMS; THERMAL DIFFUSION IN SOLIDS; THERMODYNAMIC STABILITY;

MERCURY CADMIUM TELLURIDE; TRAP DENSITY;

PHOTODIODES;

EID: 0034230315     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/7/315     Document Type: Article

References (10)

1. Nemirovsky Y, Rosenfeld D, Adar R and Kornfeld A 1989 J. Vac. Sci. Technol A 7 528-35
2. Nemirovsky Y, Fastow R, Meyassed M and Unikovsky A 1991 J. Vac. Sci. Technol. B 9 1829-39
3. Wong J Y 1980 IEEE Trans. Electron Devices 27 48-57
4. Rogalski A 1988 Infrared Phys. 28 139-53
5. Rosenfeld D and Bahir G 1992 IEEE Trans. Electron Devices 39 1638-45
6. Reine M B, Sood A K and Tredwell T J 1981 Photovoltaic infrared detectors Semiconductors and Semimetals vol 18 ed R K Willardson and A C Beer (New York: Academic) ch 6
7. Nemirovsky Y and Unikovsky A 1992 J. Vac. Sci. Technol. B 10 1602-10
8. Sze S M 1981 Physics of Semiconductor Devices (New York: Wiley) ch 4
9. Gopal V 1996 Semicond. Sci. Technol. 11 1070
10. Carper P 1982 J. Cryst. Growth 57 280-99