Excess dark currents in HgCdTe p+-n junction diodes

Semiconductor Science and Technology

Volumn 16, Issue 5, 2001, Pages 372-376

  Gopal, V ^a   Singh, S K ^a   Mehra, R M ^b  

^a SOLID STATE PHYSICS LABORATORY   (India)

^b UNIVERSITY OF DELHI   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; ELECTRON MOBILITY; ELECTRON TUNNELING; SEMICONDUCTOR JUNCTIONS;

DARK CURRENT; TRAP-ASSISTED TUNNELING;

ELECTRIC CURRENTS;

EID: 0035326976     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/5/316     Document Type: Article

References (19)