Dark currents in long wavelength infrared HgCdTe gated photodiodes

Journal of Electronic Materials

Volumn 33, Issue 6, 2004, Pages 621-629

  Nguyen, T ^a   Musca, C A ^a   Dell, J M ^a   Antoszewski, J ^a   Faraone, L ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

HgCdTe; Infrared sensor; Long wavelength infrared (LWIR); Photodiodes; Reactive ion etching (RIE)

Indexed keywords

CRYSTAL LATTICES; ELECTRIC POTENTIAL; LIQUID PHASE EPITAXY; MATHEMATICAL MODELS; MERCURY COMPOUNDS; PASSIVATION; PHOTOLITHOGRAPHY; REACTIVE ION ETCHING; SEMICONDUCTOR DEVICES; SUBSTRATES;

DARK CURRENTS; HGCDTE; INFRARED SENSORS; LONG WAVELENGTH INFRARED (LWIR); SURFACE-TUNNELING CURRENTS;

PHOTODIODES;

EID: 3042799743     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0057-2     Document Type: Conference Paper

References (14)

1. J.L. Miller, Principles of Infrared Technology (New York: Van Nostrand Reinhold, 1994), pp. 135-147.
2. E. Belas, J. Franc, A. Toth, P. Moravac, R. Grill, H. Sitter, and P. Hoschl, Semicond. Sci. Technol. 11, 1116 (1996).
3. T. Nguyen, J. Antoszewski, C.A. Musca, D.A. Redfern, J.M. Dell, and L. Faraone, J. Electron. Mater. 31, 653 (2002).
4. J.M. Dell, J. Antoszewski, M.H. Rais, C.A. Musca, B.D. Nener, and L. Faraone, J. Electron. Mater. 29, 841 (2000).
5. T. Nguyen, C.A. Musca, J.M. Dell, J. Antoszewski, and L. Faraone, J. Electron. Mater. 32, 615 (2003).
6. S.K. Ghandhi, VLSI Fabrication Principles Silicon and Gallium Arsenide (Brisbane: John Wiley and Sons, 1983), pp. 299-370.
7. A. Grove, Physics and Technology of Semiconductor Devices (Brisbane: John Wiley and Sons, 1976), pp. 289-315.
8. J. Bajaj, J.M. Arias, M. Zandian, J.G. Pasko, L.J. Kozlowski, R.E. DeWarmes, and W.E. Tennant, J. Electron. Mater. 24, 1067 (1995).
9. T.J. de Lyon, R.D. Rajavel, J.E. Jensen. O.K. Wu, S.M. Johnson, C.A. Cockrum, and G.M. Venzor, J. Electron. Mater. 25, 1341 (1996).
10. D.K. Schroder, Semiconductor Material and Device Characterization (New York: Wiley, 1990), pp. 200-204.
11. A. Ajisawa and N. Oda, J. Electron. Mater. 24, 1105 (1995).
12. S.K. Singh, V. Gopal, R.K. Bhan, and V. Kumar, Semicond. Sci. Technol. 15, 752 (2000).
13. M.B. Reine, A.K. Sood, and T.J. Tredwell, Semiconductors and Semimetals, Vol. 18, eds., R.K. Willardson and A.C. Beer (New York: Academic Press, 1981), pp. 201-311.
14. C.T. Sah, R.N. Noyce, and W. Shockley, Proc. IRE 45, 1228 (1957).