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Volumn 23, Issue 2, 2004, Pages 86-90

Study of dark current for mercury cadmium telluride long-wavelength photodiode detector with different structures

Author keywords

Dark current; Heterojunction; Mercury cadmium telluride; Photodiode; Resistance area product

Indexed keywords

ELECTRIC CURRENTS; HETEROJUNCTIONS; MERCURY COMPOUNDS; PHOTOVOLTAIC EFFECTS; STRUCTURE (COMPOSITION);

EID: 3142607273     PISSN: 10019014     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (24)

References (11)
  • 1
    • 0033718437 scopus 로고    scopus 로고
    • HgCdTe double layer heterojunction detector device
    • Glenn T Hess, Thomas J Sanders. HgCdTe double layer heterojunction detector device [J]. SPIE, 2000, 4028: 353-364
    • (2000) SPIE , vol.4028 , pp. 353-364
    • Hess, G.T.1    Sanders, T.J.2
  • 2
    • 0034874584 scopus 로고    scopus 로고
    • Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes
    • Wenus J, Rutkowski, Rogalski A. Two-dimensional analysis of double-layer heterojunction HgCdTe photodiodes [J]. SPIE, 2001, 4288: 335-344
    • (2001) SPIE , vol.4288 , pp. 335-344
    • Wenus, J.1    Rutkowski2    Rogalski, A.3
  • 3
    • 0034947368 scopus 로고    scopus 로고
    • Heterostructure HgCdTe photovoltaic detectors
    • Antoni Rogalski. Heterostructure HgCdTe photovoltaic detectors [J]. SPIE, 2001, 4355: 1-14
    • (2001) SPIE , vol.4355 , pp. 1-14
    • Rogalski, A.1
  • 5
    • 84957279965 scopus 로고
    • Tunneling and dark currents in HgCdTe photodiodes
    • Nemirovsky Y, Rosenfeld D, Adar R, et al. Tunneling and dark currents in HgCdTe photodiodes [J]. J. Vac. Sci. Technol., 1989, A7(2): 528-535
    • (1989) J. Vac. Sci. Technol. , vol.A7 , Issue.2 , pp. 528-535
    • Nemirovsky, Y.1    Rosenfeld, D.2    Adar, R.3
  • 9
    • 0026852068 scopus 로고
    • Spatial integration of direct band-to-band tunneling currents in general device structures
    • Adar R. Spatial integration of direct band-to-band tunneling currents in general device structures [J]. IEEE Transactions on Electron Devices, 1992, 39(4): 976-981
    • (1992) IEEE Transactions on Electron. Devices , vol.39 , Issue.4 , pp. 976-981
    • Adar, R.1
  • 10
    • 0023165704 scopus 로고
    • Current generation mechanisms in small band gap HgCdTe-p-n junctions fabricated by ion implantation
    • Dewames R E, Williams G M, Pasko J G, et al. Current generation mechanisms in small band Gap HgCdTe-p-n junctions fabricated by ion implantation [J]. Journal of Crystal Growth, 1988, 86: 849-858
    • (1988) Journal of Crystal Growth , vol.86 , pp. 849-858
    • Dewames, R.E.1    Williams, G.M.2    Pasko, J.G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.