Current voltage modeling of current limiting mechanisms in HgCdTe focal plane array photodetectors

Journal of Electronic Materials

Volumn 34, Issue 6, 2005, Pages 913-921

  Gilmore, Angelo Scotty ^a   Bangs, James ^a   Gerrish, Amanda ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

HgCdTe; IV; Modeling; Trap assisted tunneling (TAT)

Indexed keywords

DATABASE SYSTEMS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; LIMITERS; MATHEMATICAL MODELS; PHOTODETECTORS; SEMICONDUCTOR DIODES; THERMAL EFFECTS;

HGCDTE; IV; RAYTHEON VISION SYSTEMS (RVS); TRAP-ASSISTED TUNNELING (TAT);

MERCURY COMPOUNDS;

EID: 21644479559     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0042-4     Document Type: Conference Paper

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