HgCdTe long-wavelength infrared photovoltaic detectors fabricated using plasma-induced junction formation technology

Journal of Electronic Materials

Volumn 32, Issue 7, 2003, Pages 615-621

  Nguyen, T ^a   Musca, C A ^a   Dell, J M ^a   Antoszewski, J ^a   Faraone, L ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

HgCdTe; Infrared; Long wavelength infrared (LWIR); Photodiodes; Reactive ion etching (RIE)

Indexed keywords

DOPING (ADDITIVES); GOLD; INFRARED RADIATION; LEAKAGE CURRENTS; LIQUID PHASE EPITAXY; PHOTOVOLTAIC EFFECTS; PLASMA APPLICATIONS; REACTIVE ION ETCHING;

PHOTOVOLTAIC DETECTORS;

PHOTODETECTORS;

EID: 0042768046     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0041-2     Document Type: Conference Paper

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