Interfacial roughening during solid phase epitaxy: Interaction of dopant, stress, and anlsotropy effects

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5462-5468

  Barvosa Carter, William ^a,d   Aziz, Michael J ^a   Phan, A V ^b   Kaplan, T ^c   Gray, L J ^c  

^a HARVARD UNIVERSITY   (United States)

^b University of South Alabama   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

^d Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPANTS; INTERFACE STRESSES; SOLID PHASE EPITAXIAL GROWTH (SPEG);

AMORPHOUS SILICON; ANISOTROPY; COMPRESSIVE STRESS; EPITAXIAL GROWTH; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; REFLECTION; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

INTERFACIAL ENERGY;

EID: 9944263025     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1790580     Document Type: Article

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