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Volumn 148-149, Issue , 1997, Pages 103-121

Defects below mask edges in Silicon induced by amorphizing implantations

Author keywords

Arsenic; Crystal Defects; Dislocations; Implantation; Mask Edge; Phosphorus; Recrystallization; Secondary Defects; Silicon; Transmission Electron Microscopy; ULSI; VLSI

Indexed keywords

EID: 4243249440 PISSN: 10120386 EISSN: 16629507 Source Type: Journal
DOI: 10.4028/www.scientific.net/ddf.148-149.103 Document Type: Article

Times cited : (10)

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