Solid phase recrystallization and strain relaxation in ion-implanted strained Si on SiGe heterostructures

Materials Research Society Symposium Proceedings

Volumn 864, Issue , 2005, Pages 369-375

  Phen, M S ^a   Crosby, R T ^a   Craciun, V ^a   Jones, K S ^a   Law, M E ^a   Hansen, J L ^b   Larsen, A N ^b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; MOLECULAR BEAM EPITAXY; SILICON ALLOYS; STRAIN RATE;

GROWTH TECHNIQUES; SILICON CAPPING LAYERS;

RECRYSTALLIZATION (METALLURGY);

EID: 30544454259     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-864-e4.28     Document Type: Conference Paper

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