Modeling two-dimensional solid-phase epitaxial regrowth using level set methods

Journal of Applied Physics

Volumn 105, Issue 5, 2009, Pages

  Morarka, S ^a   Rudawski, N G ^a   Law, M E ^a   Jones, K S ^a   Elliman, R G ^b  

^a University of Florida   (United States)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; LEVEL MEASUREMENT; MOLECULAR BEAM EPITAXY; PHASE INTERFACES; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; TWO DIMENSIONAL; VELOCITY;

CRYSTALLOGRAPHIC ORIENTATIONS; EDGE DEFECTS; EPITAXIAL CRYSTALLIZATIONS; EPITAXIAL RECRYSTALLIZATION; FLORIDA; LEVEL SET METHODS; LEVEL-SET TECHNIQUES; OBJECT ORIENTED; ORIENTATION DEPENDENCES; PATTERNED MATERIALS; REGROWTH INTERFACES; SOLID-PHASE; SOLID-PHASE EPITAXIAL GROWTHS; SOLID-PHASE EPITAXIAL REGROWTHS; SOLID-PHASE EPITAXIES; STABLE MODELS;

EPITAXIAL GROWTH;

EID: 62549166697     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3082086     Document Type: Article

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