Dopant-stress synergy in Si solid-phase epitaxy

Applied Physics Letters

Volumn 92, Issue 23, 2008, Pages

  Rudawski, N G ^a   Jones, K S ^a   Gwilliam, R ^b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DOPING (ADDITIVES); EPITAXIAL GROWTH; SILICON;

(ABIOTIC AND BIOTIC) STRESS; CONCENTRATION (COMPOSITION); SOLID PHASE EPITAXY (II/SPE); SYNERGY (CO);

MOLECULAR BEAM EPITAXY;

EID: 45149099909     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2945291     Document Type: Article

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