Amorphization/templated recrystallization method for changing the orientation of single-crystal silicon: An alternative approach to hybrid orientation substrates

Applied Physics Letters

Volumn 87, Issue 22, 2005, Pages 1-3

  Saenger, K L ^a   De Souza, J P ^a   Fogel, K E ^a   Ott, J A ^a   Reznicek, A ^a   Sung, C Y ^a   Sadana, D K ^a   Yin, H ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI LAYERS; AMORPHIZATION/TEMPLATED RECRYSTALLIZATION (ATR) PROCESS; EPITAXIAL RECRYSTALLIZATION; WATER INTERFACES;

AMORPHIZATION; AMORPHOUS SILICON; ANNEALING; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; SEMICONDUCTING GERMANIUM; SINGLE CRYSTALS; SUBSTRATES; WATER;

RECRYSTALLIZATION (METALLURGY);

EID: 27944453924     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2138795     Document Type: Article

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