Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 1, 2008, Pages 435-438

  Rudawski, N G ^a   Jones, K S ^a   Elliman, R G ^b  

^a University of Florida   (United States)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE INTERFACE GEOMETRY; SOLID PHASE EPITAXY;

ARSENIC; CONCENTRATION (PROCESS); DEFECTS; EPITAXIAL GROWTH;

SILICON WAFERS;

EID: 38849094047     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2775459     Document Type: Article

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