Effects of stress on solid-phase epitaxial regrowth and corner defect generation in As+-implanted, two-dimensional amorphized Si

Journal of Crystal Growth

Volumn 231, Issue 1-2, 2001, Pages 107-114

  Shin, Yu Gyun ^a   Lee, Jeong Yong ^a   Park, Moon Han ^b   Kang, Ho Kyu ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

A1. Planar defects; A1. Stresses; A1. Transmission electron microscopy; A3. Solid phase epitaxial regrowth; B1. Arsenic implanted Si; B1. Chemical vapor deposited SiO2

Indexed keywords

AMORPHOUS SILICON; ANNEALING; ARSENIC; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION; SHEAR STRESS; STRESS ANALYSIS; SUBSTRATES; TENSILE STRESS; TRANSMISSION ELECTRON MICROSCOPY;

PLANAR DEFECTS; SOLID-PHASE EPITAXIAL REGROWTH;

SEMICONDUCTING FILMS;

EID: 0035452448     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01506-8     Document Type: Article

References (16)