Solid phase epitaxy in uniaxially stressed (001) Si

Applied Physics Letters

Volumn 91, Issue 17, 2007, Pages

  Rudawski, N G ^a   Jones, K S ^a   Gwilliam, R ^b  

^a University of Florida   (United States)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; CRYSTALLITES; CRYSTALLIZATION; EPITAXIAL GROWTH;

DEFECT FORMATION; EPITAXIAL REGROWTH VELOCITY; SOLID PHASE EPITAXY;

AMORPHOUS SILICON;

EID: 35549006723     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2801518     Document Type: Article

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