Temperature-dependence investigation of a high-performance inverted delta-doped V-shaped GaInP/In xGa 1-xAs/GaAs pseudomorphic high electron mobility transistor

IEEE Transactions on Electron Devices

Volumn 48, Issue 7, 2001, Pages 1290-1296

  Liu, Wen Chau ^a,b   Chang, Wen Lung ^b   Lour, Wen Shiung ^a,c   Yu, Kuo Hui ^b   Lin, Kun Wei ^b   Cheng, Chin Chuan ^b   Cheng, Shiou Ying ^d  

^a IEEE   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^d ORIENTAL INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Gate voltage swing; Inverted delta doped V shaped channel; Pseudomorphic high electron mobility transistor (PHEMT); Temperature dependent investigation

Indexed keywords

GATE VOLTAGE SWING; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT);

CURRENT DENSITY; GATES (TRANSISTOR); MICROWAVE DEVICES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035396476     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.930641     Document Type: Article

References (31)

1. +-InGaAs metal-insulator-doped channel FET for broad-band, large-signal applications
2. Low-distortion GaAs-base field effect transistor with InGaP channel layer for high-voltage operation
3. L/S-band 140-W push-pull power AlGaAs/GaAs HFET's for digital cellular base stations
4. AlInAs-GaInAs HEMT's utilizing low-temperature AlInAs buffers grown by MBE
5. A high performance symmetric double δ-doped GaAs/InGaAs/GaAs pseudomorphic HFET's grown by MOCVD
6. 155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators
7. 0.5 μm T-shaped gate fabrication for GaAs MODFET using phase shift lithography
8. InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage
9. Pseudomorphic inverted HEMT suitable to low supplied voltage application
10. An improved inverted δ-doped GaAs/InGaAs pseudomorphic heterostructure grown by MOCVD
11. Kink effect in an InAs-inserted-channel InAlAs/InGaAs inverted HEMT at low temperature
12. 0.85 As/GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage
13. High-performance GaInP/GaAs airbridge gate MISFET's grown by gas-source MBE
14. +)-GaInP/n-GaAs heterojunction camel-gate FET
15. 0.85As pseudomorphic transistors
16. New self-aligned T-gate InGaP/GaAs field-effect transistors grown by LP-MOCVD
17. Thin film deposition and microelectronic and optoelectrical device fabrication and characterization in monocrystalline alpha and beta silicon carbide
18. Diamond MESFET using ultrashallow RTP boron doping
19. High-temperature characteristics of GaAs MESFET devices with AlAs buffer layers
20. Microwave operation of GaN/AlGaN doped channel heterostructure field effect transistors
21. AlGaN-GaN heterostructure FET's with offset gate design
22. 1-y lattice matched to InP
23. 0.85As heterostructure pulse doped-channel FET's
24. Multiple-route current-voltage (I-V) characteristics of GaAs-InGaAs metal-insulator semiconductor-like (MIS) structure for multiple-valued logic applications
25. Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMT's
26. Investigation of the electron transfer characteristics in multi-delta-doped GaAs FET's
27. InAlAs/InGaAs/InP HEMT's with high breakdown voltages using double-recess gate process
28. DC and RF characteristics of double recessed and double pulse doped AlInAs/GaInAs/InP HEMT's
29. 1-xAs (0 ≤ x ≤ 0.25) doped-channel field-effect transistors (DCFET's)
30. 0.8As heterostructure